optoelectronic material

The Theoretical Study of the Hetero-epitaxial Growth for the Infrared Optoelectronic Material HgCdTe

红外光电子材料碲镉汞异质外延结构理论研究

β - FeSi_2 / SIMOX ── A Novel Structure Optoelectronic Material

β－FeSi2／SIMOX&一种新结构的光电子材料

Study of Quantum Optoelectronic Material Prepared by Ion Implantation

离子注入制备量子光电材料的研究

Comparison of China 's and World 's Studies in Optoelectronic Material based on the Bibliometrics

基于文献计量的我国及世界光电材料研究比较分析

Research and progress on optoelectronic material

光电材料的研究进展

Silicon nanowire is a new kind of one-dimensional semiconductor optoelectronic material .

硅纳米线是一种新型的一维半导体光电材料。

ZnO is also an ascendant piezoelectric , gas sensitive and optoelectronic material .

同时，ZnO还是优质的压电、气敏及光电材料。

As electrical or optoelectronic material , cBN has extensive applications . So , many researchers are interested in the synthesis , physical properties and application of cBN .

作为电子材料和光电子材料，cBN具有广阔的应用前景，所以在材料的制备、物理性质的研究及应用等方面受到人们的极大关注。

Visible light emission from porous silicon layers ( PSL ) and its prospect of wide applications have attracted a great interest in research on such an optoelectronic material .

在可见光谱内，多孔硅的发光现象及其广阔的应用前景激发了人们对这种潜在光电子学材料的巨大研究兴趣。

Long afterglow materials are widely used to illuminate and display in weak light environment and their application is being expanded to optoelectronic material area , especially as two dimensions of image storage and detector of high energy ray .

应用方面，除了已有的弱光照明与显示领域外，还在向光电信息功能，特别是二维图像存储，高能粒子射线探测方面发展。

The research and development of CVD diamond used as a new semiconductor optoelectronic material are reviewed , which deal with the following subjects : the preparation and electronic properties of p and n-type doped semiconductor CVD diamond ;

综述了近年来CVD金刚石作为新型半导体光电材料的研究进展。主要包括：p型、n型掺杂CVD金刚石的制备和性能；

With the development of optoelectronic material from GaAs to new generation GaN-based semiconductor material , how to manufacture long-life , high light-emitting and low power - consuming optoelectronic thin film has been a main topic in current optoelectronic material industry .

随着半导体光电材料从GaAs材料向新一代GaN基材料的发展，制备长寿命、高亮度、低能耗的薄膜发光光电材料成为当前半导体光电材料工业的主要话题。

Furthermore , ZnO is considered as a promising optoelectronic material with potential applications in light emitting diodes and laser diodes due to its wide direct bandgap ( 3.37eV ) and large exciton binding energy ( 60meV ) .

由于ZnO是直接带隙宽禁带（3.37eV）半导体并具有较大的激子束缚能（60meV），因此也是一种很有前景的光电子材料，有可能应用于发光二极管和激光二极管等。

As an environmentally benign and economically viable optoelectronic device material , amorphous carbon ( a-C ) films are of interests in various applications .

作为一种经济适用并且环境友好的光电器件材料，非晶碳薄膜因其众多优良的特性而引起广泛研究兴趣。